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Journal Of SemiconductorsSCIE

國(guó)際簡(jiǎn)稱：J SEMICOND 參考譯名：半導(dǎo)體學(xué)報(bào)

中科院分區(qū)
4區(qū)
CiteScore分區(qū)
Q1
JCR分區(qū)
Q2

基本信息：: ISSN：1674-4926; E-ISSN：1674-4926; 是否OA：未開放; 是否預(yù)警：否; TOP期刊：否

出版信息：: 出版地區(qū)：PEOPLES R CHINA; 出版商：Institute of Physics Publishing; 出版語(yǔ)言：English; 出版周期：12 issues/year; 研究方向：PHYSICS, CONDENSED MATTER

評(píng)價(jià)信息：: 影響因子：4.8; CiteScore指數(shù)：6.7; SJR指數(shù)：0.856; SNIP指數(shù)：0.799

發(fā)文數(shù)據(jù)：: Gold OA文章占比：0.00%; 研究類文章占比：68.70%; 年發(fā)文量：115; 自引率：0.0980...; 開源占比：0; 出版撤稿占比：; 出版國(guó)人文章占比：0; OA被引用占比：0

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英文簡(jiǎn)介期刊介紹 CiteScore數(shù)據(jù) 中科院SCI分區(qū) JCR分區(qū) 發(fā)文數(shù)據(jù) 常見問題

英文簡(jiǎn)介Journal Of Semiconductors期刊介紹

Founded in 1980, it is an academic journal sponsored by the Chinese Society of Electronics and the Institute of Semiconductors of the Chinese Academy of Sciences. It reports on the latest scientific research achievements and technological progress in semiconductor physics, semiconductor science and technology, and related scientific and technological fields, including semiconductor superlattice and microstructure physics, semiconductor material physics, growth and property testing of new semiconductor materials including quantum dots and quantum wires, semiconductor device physics, CAD design and development of new semiconductor devices and integrated circuits, new processes, semiconductor optoelectronic devices and optoelectronic integration, thin film growth processes, properties and applications related to semiconductor devices, etc. This journal is different from physics and electronics journals in that it focuses on semiconductors and related materials, covering physics, materials, devices, applications, research, and technological development. It is a comprehensive academic journal that spans both physics and information science disciplines. Published articles in both Chinese and English in the Journal of Semiconductors. The Journal of Semiconductors has been indexed by four major search systems in the world, including the American Engineering Index (EI), Chemical Abstracts (CA), Scientific Abstracts (SA), and Russian Abstracts Journal (パЖ).

期刊簡(jiǎn)介Journal Of Semiconductors期刊介紹

《Journal Of Semiconductors》是一本物理與天體物理優(yōu)秀雜志。致力于發(fā)表原創(chuàng)科學(xué)研究結(jié)果，并為物理與天體物理各個(gè)領(lǐng)域的原創(chuàng)研究提供一個(gè)展示平臺(tái)，以促進(jìn)物理與天體物理領(lǐng)域的的進(jìn)步。該刊鼓勵(lì)先進(jìn)的、清晰的闡述，從廣泛的視角提供當(dāng)前感興趣的研究主題的新見解，或?qū)彶槎嗄陙砟硞€(gè)重要領(lǐng)域的所有重要發(fā)展。該期刊特色在于及時(shí)報(bào)道物理與天體物理領(lǐng)域的最新進(jìn)展和新發(fā)現(xiàn)新突破等。該刊近一年未被列入預(yù)警期刊名單，目前已被權(quán)威數(shù)據(jù)庫(kù)SCIE收錄，得到了廣泛的認(rèn)可。

該期刊投稿重要關(guān)注點(diǎn)：

預(yù)計(jì)審稿時(shí)間：
物理與天體物理
PHYSICS, CONDENSED MATTER
SCIE
中科院4區(qū)
非預(yù)警

Cite Score數(shù)據(jù)（2024年最新版）Journal Of Semiconductors Cite Score數(shù)據(jù)

CiteScore：6.7
SJR：0.856
SNIP：0.799

學(xué)科類別	分區(qū)	排名	百分位
大類：Physics and Astronomy 小類：Condensed Matter Physics	Q1	84 / 434	80%
大類：Physics and Astronomy 小類：Electronic, Optical and Magnetic Materials	Q1	66 / 284	76%
大類：Physics and Astronomy 小類：Electrical and Electronic Engineering	Q1	185 / 797	76%
大類：Physics and Astronomy 小類：Materials Chemistry	Q2	81 / 317	74%

CiteScore 是由Elsevier(愛思唯爾)推出的另一種評(píng)價(jià)期刊影響力的文獻(xiàn)計(jì)量指標(biāo)。反映出一家期刊近期發(fā)表論文的年篇均引用次數(shù)。CiteScore以Scopus數(shù)據(jù)庫(kù)中收集的引文為基礎(chǔ)，針對(duì)的是前四年發(fā)表的論文的引文。CiteScore的意義在于，它可以為學(xué)術(shù)界提供一種新的、更全面、更客觀地評(píng)價(jià)期刊影響力的方法，而不僅僅是通過影響因子(IF)這一單一指標(biāo)來評(píng)價(jià)。

歷年Cite Score趨勢(shì)圖

中科院SCI分區(qū)Journal Of Semiconductors 中科院分區(qū)

中科院 2023年12月升級(jí)版 綜述期刊：否 Top期刊：否

大類學(xué)科	分區(qū)	小類學(xué)科	分區(qū)
物理與天體物理	4區(qū)	PHYSICS, CONDENSED MATTER 物理：凝聚態(tài)物理	4區(qū)

中科院分區(qū)表 是以客觀數(shù)據(jù)為基礎(chǔ)，運(yùn)用科學(xué)計(jì)量學(xué)方法對(duì)國(guó)際、國(guó)內(nèi)學(xué)術(shù)期刊依據(jù)影響力進(jìn)行等級(jí)劃分的期刊評(píng)價(jià)標(biāo)準(zhǔn)。它為我國(guó)科研、教育機(jī)構(gòu)的管理人員、科研工作者提供了一份評(píng)價(jià)國(guó)際學(xué)術(shù)期刊影響力的參考數(shù)據(jù)，得到了全國(guó)各地高校、科研機(jī)構(gòu)的廣泛認(rèn)可。

中科院分區(qū)表 將所有期刊按照一定指標(biāo)劃分為1區(qū)、2區(qū)、3區(qū)、4區(qū)四個(gè)層次，類似于“優(yōu)、良、及格”等。最開始，這個(gè)分區(qū)只是為了方便圖書管理及圖書情報(bào)領(lǐng)域的研究和期刊評(píng)估。之后中科院分區(qū)逐步發(fā)展成為了一種評(píng)價(jià)學(xué)術(shù)期刊質(zhì)量的重要工具。

歷年中科院分區(qū)趨勢(shì)圖

JCR分區(qū)Journal Of Semiconductors JCR分區(qū)

2023-2024 年最新版

按JIF指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：PHYSICS, CONDENSED MATTER	ESCI	Q2	22 / 79	72.8%

按JCI指標(biāo)學(xué)科分區(qū)	收錄子集	分區(qū)	排名	百分位
學(xué)科：PHYSICS, CONDENSED MATTER	ESCI	Q2	37 / 79	53.8%

JCR分區(qū)的優(yōu)勢(shì)在于它可以幫助讀者對(duì)學(xué)術(shù)文獻(xiàn)質(zhì)量進(jìn)行評(píng)估。不同學(xué)科的文章引用量可能存在較大的差異，此時(shí)單獨(dú)依靠影響因子(IF)評(píng)價(jià)期刊的質(zhì)量可能是存在一定問題的。因此，JCR將期刊按照學(xué)科門類和影響因子分為不同的分區(qū)，這樣讀者可以根據(jù)自己的研究領(lǐng)域和需求選擇合適的期刊。

歷年影響因子趨勢(shì)圖

本刊中國(guó)學(xué)者近年發(fā)表論文

1、Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer
Author: Zhong, Li; Li, Xiaobao; Wang, Wei; Xiao, Xinle

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012701
2、Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40 degrees-twisted bilayer WS2
Author: Zhao, Siwen; Shao, Gonglei; Han, Zheng Vitto; Liu, Song; Zhang, Tongyao

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012001
3、The twisted two-dimensional ferroelectrics
Author: Zhang, Xinhao; Peng, Bo

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011002
4、Review of phonons in moire superlattices
Author: Li, Zhenyao; Lai, Jia-Min; Zhang, Jun

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011902
5、75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique
Author: Li, Xiuli; Zhu, Yupeng; Liu, Zhi; Peng, Linzhi; Liu, Xiangquan; Niu, Chaoqun; Zheng, Jun; Zuo, Yuhua; Cheng, Buwen

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/012301
6、Interface engineering in two-dimensional heterostructures towards novel emitters
Author: Li, Hua; Ling, Jinyang; Lin, Jiamin; Lu, Xin; Xu, Weigao

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011001
7、Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moire superlattices
Author: Huang, Xinyu; Han, Xu; Dai, Yunyun; Xu, Xiaolong; Yan, Jiahao; Huang, Mengting; Ding, Pengfei; Zhang, Decheng; Chen, Hui; Laxmi, Vijay; Wu, Xu; Liu, Liwei; Wang, Yeliang; Xu, Yang; Huang, Yuan

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011901
8、Interaction of moire excitons with cavity photons in two-dimensional semiconductor hetero-bilayers
Author: Gao, Yuchen; Ye, Yu

Journal: JOURNAL OF SEMICONDUCTORS. 2023; Vol. 44, Issue 1, pp. -. DOI: 10.1088/1674-4926/44/1/011903